Show Hamamatsu Avalanche Photo Diode 2704030293
This is all the information about APD 2704030293. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2704030293 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D09 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
380.1 V |
| Dark current: |
15.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
76 |
| Position in Box: |
31 |
| EP1 batch: |
59 |
| EP1 batch after irradiation: |
10175 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.8494957 V T = -25 °C: 345.5796598 V |
| Voltage for Gain 150: |
T = +20 °C: 388.6084406 V T = -25 °C: 352.8361834 V |
| Voltage for Gain 200: |
T = +20 °C: 392.9113342 V T = -25 °C: 356.9047555 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.704902747 V-1 T = -25 °C: 4.775849693 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.467081934 V-1 T = -25 °C: 9.832593348 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.90232999 V-1 T = -25 °C: 15.72802899 V-1 |
| Break-through voltage: |
T = +20 °C: 407.5320382 V T = -25 °C: 371.166654 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
