Show Hamamatsu Avalanche Photo Diode 0802007336
This is all the information about APD 0802007336. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0802007336 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A10 |
Break-through voltage: |
423 V |
Voltage for Gain 100 (T=+25°C): |
394.4 V |
Dark current: |
4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
182 |
Position in Box: |
25 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10104 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
09. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
04. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
05. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 395.0685069 V T = -25 °C: 358.516462 V |
Voltage for Gain 150: |
T = +20 °C: 402.9286197 V T = -25 °C: 366.19186 V |
Voltage for Gain 200: |
T = +20 °C: 407.2784695 V T = -25 °C: 370.4801641 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.589850542 V-1 T = -25 °C: 4.578094361 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.173224589 V-1 T = -25 °C: 9.112391541 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.45513435 V-1 T = -25 °C: 14.26943051 V-1 |
Break-through voltage: |
T = +20 °C: 422.8136524 V T = -25 °C: 386.4410471 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history