Show Hamamatsu Avalanche Photo Diode 2703030179
This is all the information about APD 2703030179. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2703030179 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A11 |
Break-through voltage: |
413 V |
Voltage for Gain 100 (T=+25°C): |
387.8 V |
Dark current: |
18.2 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
178 |
Position in Box: |
33 |
EP1 batch: |
57 |
EP1 batch after irradiation: |
10173 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
26. Aug 2019 |
Sent for analysis after irradiation: |
02. Sep 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
28. Aug 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
31. Aug 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 387.5057548 V T = -25 °C: 351.599982 V |
Voltage for Gain 150: |
T = +20 °C: 395.4190764 V T = -25 °C: 359.1384634 V |
Voltage for Gain 200: |
T = +20 °C: 399.8118751 V T = -25 °C: 363.3798874 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.406554863 V-1 T = -25 °C: 4.610724781 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.569501149 V-1 T = -25 °C: 9.17513845 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.81994149 V-1 T = -25 °C: 14.34682653 V-1 |
Break-through voltage: |
T = +20 °C: 411.4911904 V T = -25 °C: 377.6969772 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history