Show Hamamatsu Avalanche Photo Diode 2610029966
This is all the information about APD 2610029966. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2610029966 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B09 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
376.1 V |
Dark current: |
10.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
72 |
Position in Box: |
40 |
EP1 batch: |
53 |
EP1 batch after irradiation: |
10170 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
26. Aug 2019 |
Sent for analysis after irradiation: |
02. Sep 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
28. Aug 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
31. Aug 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.9396921 V T = -25 °C: 344.5534276 V |
Voltage for Gain 150: |
T = +20 °C: 387.7634611 V T = -25 °C: 351.9261952 V |
Voltage for Gain 200: |
T = +20 °C: 392.1116029 V T = -25 °C: 356.0618987 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.649838419 V-1 T = -25 °C: 4.718644918 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.227151277 V-1 T = -25 °C: 9.595715814 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.43009917 V-1 T = -25 °C: 15.19554288 V-1 |
Break-through voltage: |
T = +20 °C: 406.7378645 V T = -25 °C: 370.6962625 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history