Show Hamamatsu Avalanche Photo Diode 0802007306
This is all the information about APD 0802007306. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0802007306 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F07 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
388.1 V |
Dark current: |
3.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
54 |
Position in Box: |
17 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10080 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
18. Apr 2019 |
Sent for analysis after irradiation: |
04. Jun 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
29. May 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
29. May 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 387.7840905 V T = -25 °C: 351.6516552 V |
Voltage for Gain 150: |
T = +20 °C: 395.6791957 V T = -25 °C: 359.2444296 V |
Voltage for Gain 200: |
T = +20 °C: 400.0674733 V T = -25 °C: 363.4875209 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.588142053 V-1 T = -25 °C: 4.858052917 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.934554435 V-1 T = -25 °C: 8.721636091 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.41371773 V-1 T = -25 °C: 15.02171575 V-1 |
Break-through voltage: |
T = +20 °C: 415.2022378 V T = -25 °C: 378.9042137 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history