Show Hamamatsu Avalanche Photo Diode 2608029768
This is all the information about APD 2608029768. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2608029768 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B06 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
378.8 V |
Dark current: |
7.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
357 |
Position in Box: |
48 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10071 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
24. Jul 2018 |
Sent for analysis after irradiation: |
21. Aug 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Aug 2018 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Aug 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 378.9588983 V T = -25 °C: 343.80056 V |
Voltage for Gain 150: |
T = +20 °C: 386.7727497 V T = -25 °C: 351.1359176 V |
Voltage for Gain 200: |
T = +20 °C: 391.1378119 V T = -25 °C: 355.3031512 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.609813613 V-1 T = -25 °C: 5.007950496 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.106315333 V-1 T = -25 °C: 9.245594018 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.42840216 V-1 T = -25 °C: 13.99373923 V-1 |
Break-through voltage: |
T = +20 °C: 406.511286 V T = -25 °C: 370.5235989 V |
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Notes: |
foam
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history