Show Hamamatsu Avalanche Photo Diode 2608029767
This is all the information about APD 2608029767. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2608029767 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2008022059/2608029767 |
| Unit: |
#2124 (barcode 1309021703) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B07 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.2 V |
| Dark current: |
7.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
70 |
| Position in Box: |
7 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10071 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.6471598 V T = -25 °C: 343.4843193 V |
| Voltage for Gain 150: |
T = +20 °C: 386.4036792 V T = -25 °C: 350.7926234 V |
| Voltage for Gain 200: |
T = +20 °C: 390.7316845 V T = -25 °C: 354.8923989 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.434105585 V-1 T = -25 °C: 4.593779516 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.168199607 V-1 T = -25 °C: 9.73670077 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.95749327 V-1 T = -25 °C: 15.67247843 V-1 |
| Break-through voltage: |
T = +20 °C: 405.9208243 V T = -25 °C: 369.9036034 V |
| |
|
| Notes: |
foam, has multiple scratches on its surface (21_08_2018)
|
Characteristics
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Measurement |
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Progression of the current during irradiation
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Version history
