Show Hamamatsu Avalanche Photo Diode 2608029750
This is all the information about APD 2608029750. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2608029750 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2608029750/1915021461 |
| Unit: |
#1156 (barcode 1309012596) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C03 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.4 V |
| Dark current: |
6.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
69 |
| Position in Box: |
40 |
| EP1 batch: |
50 |
| EP1 batch after irradiation: |
10197 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.3152504 V T = -25 °C: 346.0807116 V |
| Voltage for Gain 150: |
T = +20 °C: 389.1662726 V T = -25 °C: 353.4789894 V |
| Voltage for Gain 200: |
T = +20 °C: 393.5369897 V T = -25 °C: 357.6178019 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.479977263 V-1 T = -25 °C: 4.847545615 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.783280636 V-1 T = -25 °C: 8.98417368 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.2864946 V-1 T = -25 °C: 15.8636972 V-1 |
| Break-through voltage: |
T = +20 °C: 409.4389103 V T = -25 °C: 373.2616385 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
