Show Hamamatsu Avalanche Photo Diode 2520029080
This is all the information about APD 2520029080. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2520029080 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C03 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
383.3 V |
Dark current: |
5.9 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
68 |
Position in Box: |
37 |
EP1 batch: |
48 |
EP1 batch after irradiation: |
10138 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
16. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.3760077 V T = -25 °C: 347.7784632 V |
Voltage for Gain 150: |
T = +20 °C: 391.259463 V T = -25 °C: 355.2386415 V |
Voltage for Gain 200: |
T = +20 °C: 395.6392987 V T = -25 °C: 359.4237596 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.43773905 V-1 T = -25 °C: 4.938609746 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.667484174 V-1 T = -25 °C: 9.098977072 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.99883496 V-1 T = -25 °C: 16.1995356 V-1 |
Break-through voltage: |
T = +20 °C: 411.2201042 V T = -25 °C: 374.9522586 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history