Show Hamamatsu Avalanche Photo Diode 2409026579
This is all the information about APD 2409026579. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2409026579 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
385.5 V |
| Dark current: |
3.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
13 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10021 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
12. Nov 2018 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
38 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.0187768 V T = -25 °C: 349.3399143 V |
| Voltage for Gain 150: |
T = +20 °C: 392.8660289 V T = -25 °C: 356.8239747 V |
| Voltage for Gain 200: |
T = +20 °C: 397.2149901 V T = -25 °C: 361.0354105 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.644183385 V-1 T = -25 °C: 4.631928478 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.222567754 V-1 T = -25 °C: 9.091594272 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.50576331 V-1 T = -25 °C: 15.69858927 V-1 |
| Break-through voltage: |
T = +20 °C: 412.9235753 V T = -25 °C: 376.2966109 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
