Show Hamamatsu Avalanche Photo Diode 2408026496
This is all the information about APD 2408026496. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2408026496 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E15 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
383.7 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
12 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10019 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
12. Nov 2018 |
| Sent for analysis after irradiation: |
13. Dec 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
07. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.8935121 V T = -25 °C: 347.3141855 V |
| Voltage for Gain 150: |
T = +20 °C: 390.7327617 V T = -25 °C: 354.7321124 V |
| Voltage for Gain 200: |
T = +20 °C: 395.0660788 V T = -25 °C: 358.8714849 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.665849687 V-1 T = -25 °C: 4.802972473 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.38198846 V-1 T = -25 °C: 9.868518993 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.84011047 V-1 T = -25 °C: 15.91776643 V-1 |
| Break-through voltage: |
T = +20 °C: 408.7411885 V T = -25 °C: 372.6092369 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
