Show Hamamatsu Avalanche Photo Diode 2408026493
This is all the information about APD 2408026493. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2408026493 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C02 |
Break-through voltage: |
413 V |
Voltage for Gain 100 (T=+25°C): |
385.6 V |
Dark current: |
7.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
353 |
Position in Box: |
50 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10019 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
12. Nov 2018 |
Sent for analysis after irradiation: |
13. Dec 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
07. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 384.7188886 V T = -25 °C: 349.0938801 V |
Voltage for Gain 150: |
T = +20 °C: 392.6538956 V T = -25 °C: 356.6184227 V |
Voltage for Gain 200: |
T = +20 °C: 397.0633074 V T = -25 °C: 360.8317949 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.357623787 V-1 T = -25 °C: 4.791223772 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.24377981 V-1 T = -25 °C: 8.776668524 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.33696039 V-1 T = -25 °C: 15.45485273 V-1 |
Break-through voltage: |
T = +20 °C: 410.8173056 V T = -25 °C: 375.8047036 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history