Show Hamamatsu Avalanche Photo Diode 2405026248
This is all the information about APD 2405026248. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2405026248 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E03 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
386.4 V |
Dark current: |
3.9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
9 |
Position in Box: |
3 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10014 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
12. Nov 2018 |
Sent for analysis after irradiation: |
13. Dec 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
07. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 386.4774323 V T = -25 °C: 350.713004 V |
Voltage for Gain 150: |
T = +20 °C: 394.3393649 V T = -25 °C: 358.135886 V |
Voltage for Gain 200: |
T = +20 °C: 398.6657216 V T = -25 °C: 362.2900509 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.4056091 V-1 T = -25 °C: 5.042729643 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.25428151 V-1 T = -25 °C: 8.798295037 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.57565066 V-1 T = -25 °C: 14.89106895 V-1 |
Break-through voltage: |
T = +20 °C: 414.1247521 V T = -25 °C: 377.4944426 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history