Show Hamamatsu Avalanche Photo Diode 2402026016
This is all the information about APD 2402026016. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2402026016 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E01 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.8 V |
Dark current: |
4.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
175 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10004 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
24. Jul 2018 |
Sent for analysis after irradiation: |
21. Aug 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Aug 2018 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Aug 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.3012766 V T = -25 °C: 347.060864 V |
Voltage for Gain 150: |
T = +20 °C: 390.1940178 V T = -25 °C: 354.5413915 V |
Voltage for Gain 200: |
T = +20 °C: 394.5899059 V T = -25 °C: 358.690715 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.090950086 V-1 T = -25 °C: 4.77238866 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.293123904 V-1 T = -25 °C: 8.579191055 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.73936095 V-1 T = -25 °C: 14.26316672 V-1 |
Break-through voltage: |
T = +20 °C: 409.6133231 V T = -25 °C: 373.7926477 V |
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Notes: |
foam
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history