Show Hamamatsu Avalanche Photo Diode 2402025996
This is all the information about APD 2402025996. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2402025996 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G10 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
383.2 V |
Dark current: |
4.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
175 |
Position in Box: |
33 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10004 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
24. Jul 2018 |
Sent for analysis after irradiation: |
21. Aug 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Aug 2018 |
Dose used: |
30 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Aug 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.121401 V T = -25 °C: 347.3573326 V |
Voltage for Gain 150: |
T = +20 °C: 390.9805289 V T = -25 °C: 354.8236098 V |
Voltage for Gain 200: |
T = +20 °C: 395.3135801 V T = -25 °C: 359.0057172 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.545091522 V-1 T = -25 °C: 4.837965921 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.8917663 V-1 T = -25 °C: 9.214361657 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.30103877 V-1 T = -25 °C: 14.91889301 V-1 |
Break-through voltage: |
T = +20 °C: 410.6830591 V T = -25 °C: 374.508232 V |
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Notes: |
foam
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history