Show Hamamatsu Avalanche Photo Diode 2401025940
This is all the information about APD 2401025940. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2401025940 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D03 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.1 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
6 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10009 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
02. Oct 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Sep 2018 |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
28. Sep 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.308493 V T = -25 °C: 352.2424447 V |
| Voltage for Gain 150: |
T = +20 °C: 396.1352074 V T = -25 °C: 359.783094 V |
| Voltage for Gain 200: |
T = +20 °C: 400.4819555 V T = -25 °C: 364.011006 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.53197413 V-1 T = -25 °C: 4.752243863 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.901087285 V-1 T = -25 °C: 9.53335029 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.69650926 V-1 T = -25 °C: 14.9148469 V-1 |
| Break-through voltage: |
T = +20 °C: 416.1917089 V T = -25 °C: 379.9508425 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history