Show Hamamatsu Avalanche Photo Diode 2320025881
This is all the information about APD 2320025881. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2320025881 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D01 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
380.1 V |
Dark current: |
5.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
26 |
Position in Box: |
37 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10008 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Sep 2018 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 379.7632277 V T = -25 °C: 344.5758252 V |
Voltage for Gain 150: |
T = +20 °C: 387.7010491 V T = -25 °C: 352.0251898 V |
Voltage for Gain 200: |
T = +20 °C: 392.1183761 V T = -25 °C: 356.226528 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.637661875 V-1 T = -25 °C: 4.698585832 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.200294307 V-1 T = -25 °C: 9.306731867 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.58596361 V-1 T = -25 °C: 14.65530652 V-1 |
Break-through voltage: |
T = +20 °C: 407.8543426 V T = -25 °C: 371.6190772 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history