Show Hamamatsu Avalanche Photo Diode 2319025808
This is all the information about APD 2319025808. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2319025808 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
At GSI for QE measurement |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G08 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
383.8 V |
Dark current: |
3.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
4 |
Position in Box: |
4 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10006 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Sep 2018 |
Sent for analysis after irradiation: |
02. Oct 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
27. Sep 2018 |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
28. Sep 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.9481591 V T = -25 °C: 347.7661758 V |
Voltage for Gain 150: |
T = +20 °C: 390.7166684 V T = -25 °C: 355.0451044 V |
Voltage for Gain 200: |
T = +20 °C: 395.0196192 V T = -25 °C: 359.1218255 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.663244193 V-1 T = -25 °C: 5.145406371 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.111032055 V-1 T = -25 °C: 9.111816037 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.09430549 V-1 T = -25 °C: 15.1353946 V-1 |
Break-through voltage: |
T = +20 °C: 409.8592404 V T = -25 °C: 373.9880089 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history