Show Hamamatsu Avalanche Photo Diode 2519028990
This is all the information about APD 2519028990. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2519028990 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
374.7 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
67 |
| Position in Box: |
9 |
| EP1 batch: |
46 |
| EP1 batch after irradiation: |
10136 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 374.5792783 V T = -25 °C: 339.7248005 V |
| Voltage for Gain 150: |
T = +20 °C: 382.3496834 V T = -25 °C: 347.005484 V |
| Voltage for Gain 200: |
T = +20 °C: 386.700991 V T = -25 °C: 351.1095936 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.481481707 V-1 T = -25 °C: 5.095228272 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.708693736 V-1 T = -25 °C: 9.554941763 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.03789236 V-1 T = -25 °C: 15.15543499 V-1 |
| Break-through voltage: |
T = +20 °C: 402.6454845 V T = -25 °C: 366.3392101 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
