Show Hamamatsu Avalanche Photo Diode 2519028972
This is all the information about APD 2519028972. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2519028972 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A09 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383 V |
| Dark current: |
2.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
61 |
| Position in Box: |
44 |
| EP1 batch: |
45 |
| EP1 batch after irradiation: |
10135 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.796429 V T = -25 °C: 348.3101811 V |
| Voltage for Gain 150: |
T = +20 °C: 391.630644 V T = -25 °C: 355.7385292 V |
| Voltage for Gain 200: |
T = +20 °C: 395.9671109 V T = -25 °C: 359.8997104 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.678988978 V-1 T = -25 °C: 4.787376049 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.399684942 V-1 T = -25 °C: 9.723368561 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.73965359 V-1 T = -25 °C: 15.40257558 V-1 |
| Break-through voltage: |
T = +20 °C: 409.8890001 V T = -25 °C: 373.6242159 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
