Show Hamamatsu Avalanche Photo Diode 2518028925
This is all the information about APD 2518028925. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2518028925 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.2 V |
| Dark current: |
5.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
65 |
| Position in Box: |
47 |
| EP1 batch: |
44 |
| EP1 batch after irradiation: |
10134 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.4315154 V T = -25 °C: 342.2358515 V |
| Voltage for Gain 150: |
T = +20 °C: 385.2193372 V T = -25 °C: 349.5644384 V |
| Voltage for Gain 200: |
T = +20 °C: 389.5738384 V T = -25 °C: 353.6650219 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.506815883 V-1 T = -25 °C: 4.89076334 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.805117589 V-1 T = -25 °C: 9.975698965 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.34567842 V-1 T = -25 °C: 16.08622802 V-1 |
| Break-through voltage: |
T = +20 °C: 405.0100776 V T = -25 °C: 368.8709149 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
