Show Hamamatsu Avalanche Photo Diode 2517028880
This is all the information about APD 2517028880. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2517028880 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2517028880/2508028107 |
| Unit: |
#1746 (barcode 1309018178) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E14 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.7 V |
| Dark current: |
3.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
65 |
| Position in Box: |
11 |
| EP1 batch: |
43 |
| EP1 batch after irradiation: |
10132 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.6772283 V T = -25 °C: 346.8331076 V |
| Voltage for Gain 150: |
T = +20 °C: 389.5818615 V T = -25 °C: 354.0920163 V |
| Voltage for Gain 200: |
T = +20 °C: 393.9458894 V T = -25 °C: 358.1438996 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.371548343 V-1 T = -25 °C: 4.986163017 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.300907853 V-1 T = -25 °C: 9.562097185 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.49488464 V-1 T = -25 °C: 15.27482681 V-1 |
| Break-through voltage: |
T = +20 °C: 409.6942364 V T = -25 °C: 373.3064523 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
