Show Hamamatsu Avalanche Photo Diode 2516028808
This is all the information about APD 2516028808. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2516028808 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2516028808/2518028944 |
| Unit: |
#2685 (barcode 1309028436) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C11 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.2 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
63 |
| Position in Box: |
45 |
| EP1 batch: |
61 |
| EP1 batch after irradiation: |
10255 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.2419814 V T = -25 °C: 343.0499451 V |
| Voltage for Gain 150: |
T = +20 °C: 386.0517494 V T = -25 °C: 350.3946202 V |
| Voltage for Gain 200: |
T = +20 °C: 390.4238924 V T = -25 °C: 354.5213833 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.560036958 V-1 T = -25 °C: 4.947253772 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.964981678 V-1 T = -25 °C: 9.174356867 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.85331575 V-1 T = -25 °C: 16.35901876 V-1 |
| Break-through voltage: |
T = +20 °C: 405.8783519 V T = -25 °C: 369.7979486 V |
| |
|
| Notes: |
With Christopher Wenzel (Bochum) for test measurements.
|
Characteristics
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Measurement |
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Progression of the current during irradiation
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Version history
