Show Hamamatsu Avalanche Photo Diode 2516028787
This is all the information about APD 2516028787. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2516028787 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
376.7 V |
| Dark current: |
5.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
63 |
| Position in Box: |
24 |
| EP1 batch: |
40 |
| EP1 batch after irradiation: |
10198 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.7304173 V T = -25 °C: 341.779506 V |
| Voltage for Gain 150: |
T = +20 °C: 384.5194726 V T = -25 °C: 349.0680511 V |
| Voltage for Gain 200: |
T = +20 °C: 388.8551079 V T = -25 °C: 353.1667662 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.752766964 V-1 T = -25 °C: 5.067124479 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.566458766 V-1 T = -25 °C: 9.492458876 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.8166019 V-1 T = -25 °C: 15.00287351 V-1 |
| Break-through voltage: |
T = +20 °C: 404.3703418 V T = -25 °C: 368.3855893 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
