Show Hamamatsu Avalanche Photo Diode 2516028770
This is all the information about APD 2516028770. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2516028770 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2516028770/0823008963 |
Unit: |
#3710 (barcode 1309039951) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
E13 |
Break-through voltage: |
404 V |
Voltage for Gain 100 (T=+25°C): |
375.4 V |
Dark current: |
4.2 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
63 |
Position in Box: |
8 |
EP1 batch: |
39 |
EP1 batch after irradiation: |
10197 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 375.2516011 V T = -25 °C: 340.5733673 V |
Voltage for Gain 150: |
T = +20 °C: 383.0099677 V T = -25 °C: 347.8463784 V |
Voltage for Gain 200: |
T = +20 °C: 387.3600848 V T = -25 °C: 351.9252727 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.584821354 V-1 T = -25 °C: 4.79686788 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.00666562 V-1 T = -25 °C: 9.816648556 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.00190569 V-1 T = -25 °C: 15.6315542 V-1 |
Break-through voltage: |
T = +20 °C: 403.2650842 V T = -25 °C: 367.3896639 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history