Show Hamamatsu Avalanche Photo Diode 2516028761
This is all the information about APD 2516028761. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2516028761 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2501027574/2516028761 |
Unit: |
#1135 (barcode 1309012220) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
B07 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
378.2 V |
Dark current: |
5.3 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
62 |
Position in Box: |
49 |
EP1 batch: |
39 |
EP1 batch after irradiation: |
10129 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 378.2998125 V T = -25 °C: 343.1501335 V |
Voltage for Gain 150: |
T = +20 °C: 386.1166983 V T = -25 °C: 350.5108069 V |
Voltage for Gain 200: |
T = +20 °C: 390.4688641 V T = -25 °C: 354.6451714 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.599777259 V-1 T = -25 °C: 4.926823968 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.072470354 V-1 T = -25 °C: 9.206268679 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.34799755 V-1 T = -25 °C: 14.60673074 V-1 |
Break-through voltage: |
T = +20 °C: 405.8490406 V T = -25 °C: 369.6113312 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history