Show Hamamatsu Avalanche Photo Diode 2515028715
This is all the information about APD 2515028715. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2515028715 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C15 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
385.4 V |
| Dark current: |
7.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
62 |
| Position in Box: |
23 |
| EP1 batch: |
38 |
| EP1 batch after irradiation: |
10128 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.143416 V T = -25 °C: 349.5902594 V |
| Voltage for Gain 150: |
T = +20 °C: 392.927813 V T = -25 °C: 356.9942592 V |
| Voltage for Gain 200: |
T = +20 °C: 397.244212 V T = -25 °C: 361.1196922 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.641373463 V-1 T = -25 °C: 4.713397276 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.222572933 V-1 T = -25 °C: 9.635279691 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.5981223 V-1 T = -25 °C: 15.39472667 V-1 |
| Break-through voltage: |
T = +20 °C: 410.3840149 V T = -25 °C: 374.869602 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
