Show Hamamatsu Avalanche Photo Diode 2515028683
This is all the information about APD 2515028683. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2515028683 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3405036740/2515028683 |
| Unit: |
#2780 (barcode 1309028269) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H06 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.6 V |
| Dark current: |
7.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
61 |
| Position in Box: |
47 |
| EP1 batch: |
37 |
| EP1 batch after irradiation: |
10127 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.621232 V T = -25 °C: 345.1818217 V |
| Voltage for Gain 150: |
T = +20 °C: 388.4899128 V T = -25 °C: 352.5959023 V |
| Voltage for Gain 200: |
T = +20 °C: 392.8669432 V T = -25 °C: 356.7597191 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.438858342 V-1 T = -25 °C: 4.857280357 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.63406604 V-1 T = -25 °C: 9.04552668 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.12518887 V-1 T = -25 °C: 16.18017332 V-1 |
| Break-through voltage: |
T = +20 °C: 407.7463234 V T = -25 °C: 371.8699881 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
