Show Hamamatsu Avalanche Photo Diode 2515028665
This is all the information about APD 2515028665. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2515028665 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2818032245/2515028665 |
Unit: |
#3134 (barcode 1309032792) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
red |
|
|
Manufacturer information: |
|
Wafer position: |
F04 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
378.9 V |
Dark current: |
4.6 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
61 |
Position in Box: |
16 |
EP1 batch: |
37 |
EP1 batch after irradiation: |
10127 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 378.731974 V T = -25 °C: 343.4996726 V |
Voltage for Gain 150: |
T = +20 °C: 386.5343386 V T = -25 °C: 350.8083941 V |
Voltage for Gain 200: |
T = +20 °C: 390.889132 V T = -25 °C: 354.8809025 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.468729738 V-1 T = -25 °C: 4.859119302 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.728780418 V-1 T = -25 °C: 10.0806073 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.32501125 V-1 T = -25 °C: 16.31698594 V-1 |
Break-through voltage: |
T = +20 °C: 406.5988921 V T = -25 °C: 370.162467 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history