Show Hamamatsu Avalanche Photo Diode 2514028635
This is all the information about APD 2514028635. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2514028635 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.6 V |
| Dark current: |
7.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
61 |
| Position in Box: |
7 |
| EP1 batch: |
36 |
| EP1 batch after irradiation: |
10126 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.8367654 V T = -25 °C: 344.4523239 V |
| Voltage for Gain 150: |
T = +20 °C: 386.6835235 V T = -25 °C: 351.6856164 V |
| Voltage for Gain 200: |
T = +20 °C: 391.0531844 V T = -25 °C: 355.7293962 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.696748576 V-1 T = -25 °C: 5.118829844 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.626441972 V-1 T = -25 °C: 9.477020612 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.43224058 V-1 T = -25 °C: 15.25341821 V-1 |
| Break-through voltage: |
T = +20 °C: 406.9333688 V T = -25 °C: 370.904046 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
