Show Hamamatsu Avalanche Photo Diode 2514028632
This is all the information about APD 2514028632. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2514028632 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
383 V |
| Dark current: |
6.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
61 |
| Position in Box: |
6 |
| EP1 batch: |
36 |
| EP1 batch after irradiation: |
10126 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.1766048 V T = -25 °C: 347.3239471 V |
| Voltage for Gain 150: |
T = +20 °C: 390.0383993 V T = -25 °C: 354.6450827 V |
| Voltage for Gain 200: |
T = +20 °C: 394.4015117 V T = -25 °C: 358.7571209 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.636575598 V-1 T = -25 °C: 5.001717822 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.328840201 V-1 T = -25 °C: 9.309056919 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.7317924 V-1 T = -25 °C: 14.83042029 V-1 |
| Break-through voltage: |
T = +20 °C: 409.6991657 V T = -25 °C: 373.8028179 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
