Show Hamamatsu Avalanche Photo Diode 2514028605
This is all the information about APD 2514028605. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2514028605 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
G03 |
Break-through voltage: |
413 V |
Voltage for Gain 100 (T=+25°C): |
383.8 V |
Dark current: |
4.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
178 |
Position in Box: |
21 |
EP1 batch: |
35 |
EP1 batch after irradiation: |
10125 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.8426819 V T = -25 °C: 347.9726582 V |
Voltage for Gain 150: |
T = +20 °C: 391.5948232 V T = -25 °C: 355.4857173 V |
Voltage for Gain 200: |
T = +20 °C: 396.682949 V T = -25 °C: 359.7058776 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 5.233867455 V-1 T = -25 °C: 4.88128751 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.405248814 V-1 T = -25 °C: 8.95916898 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 24.59058363 V-1 T = -25 °C: 16.04790048 V-1 |
Break-through voltage: |
T = +20 °C: 411.795136 V T = -25 °C: 375.4834604 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history