Show Hamamatsu Avalanche Photo Diode 2514028595
This is all the information about APD 2514028595. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2514028595 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C03 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
385.9 V |
Dark current: |
5.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
178 |
Position in Box: |
15 |
EP1 batch: |
35 |
EP1 batch after irradiation: |
10125 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 385.9949287 V T = -25 °C: 350.2024211 V |
Voltage for Gain 150: |
T = +20 °C: 393.8426702 V T = -25 °C: 357.6695198 V |
Voltage for Gain 200: |
T = +20 °C: 398.1836608 V T = -25 °C: 361.8349856 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.653874932 V-1 T = -25 °C: 4.828498298 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.324869061 V-1 T = -25 °C: 8.957448856 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.70089552 V-1 T = -25 °C: 16.00097118 V-1 |
Break-through voltage: |
T = +20 °C: 413.3587024 V T = -25 °C: 376.6461385 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history