Show Hamamatsu Avalanche Photo Diode 2513028486
This is all the information about APD 2513028486. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2513028486 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E13 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
382.8 V |
Dark current: |
5.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
180 |
Position in Box: |
26 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10667 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.7521244 V T = -25 °C: 347.2440165 V |
Voltage for Gain 150: |
T = +20 °C: 390.6621758 V T = -25 °C: 354.6799116 V |
Voltage for Gain 200: |
T = +20 °C: 395.0431549 V T = -25 °C: 358.8071907 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.688059829 V-1 T = -25 °C: 4.887560956 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.276342415 V-1 T = -25 °C: 10.12747169 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.24812474 V-1 T = -25 °C: 15.86744045 V-1 |
Break-through voltage: |
T = +20 °C: 410.8274505 V T = -25 °C: 374.2632241 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history