Show Hamamatsu Avalanche Photo Diode 2511028343
This is all the information about APD 2511028343. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2511028343 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0720006903/2511028343 |
| Unit: |
#3112 (barcode 1309034048) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F14 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.4 V |
| Dark current: |
5.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
173 |
| Position in Box: |
16 |
| EP1 batch: |
28 |
| EP1 batch after irradiation: |
10118 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.1918817 V T = -25 °C: 350.2807222 V |
| Voltage for Gain 150: |
T = +20 °C: 394.0196254 V T = -25 °C: 357.7611539 V |
| Voltage for Gain 200: |
T = +20 °C: 398.3803011 V T = -25 °C: 361.9646129 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.563789685 V-1 T = -25 °C: 4.748107091 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.258132087 V-1 T = -25 °C: 9.117561538 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.73989702 V-1 T = -25 °C: 16.15165229 V-1 |
| Break-through voltage: |
T = +20 °C: 414.2875289 V T = -25 °C: 377.8420077 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
