Show Hamamatsu Avalanche Photo Diode 2511028339
This is all the information about APD 2511028339. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2511028339 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C14 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
389.8 V |
Dark current: |
8.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
173 |
Position in Box: |
13 |
EP1 batch: |
28 |
EP1 batch after irradiation: |
10118 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 390.9411849 V T = -25 °C: 354.6800285 V |
Voltage for Gain 150: |
T = +20 °C: 398.6102826 V T = -25 °C: 362.0850989 V |
Voltage for Gain 200: |
T = +20 °C: 402.8739821 V T = -25 °C: 366.2024373 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.502842469 V-1 T = -25 °C: 4.796239936 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.003078077 V-1 T = -25 °C: 9.806356122 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.08128298 V-1 T = -25 °C: 15.96862533 V-1 |
Break-through voltage: |
T = +20 °C: 416.599683 V T = -25 °C: 380.3207787 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history