Show Hamamatsu Avalanche Photo Diode 2510028309
This is all the information about APD 2510028309. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2510028309 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E05 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
380.9 V |
Dark current: |
8.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
172 |
Position in Box: |
39 |
EP1 batch: |
27 |
EP1 batch after irradiation: |
10117 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 381.5110219 V T = -25 °C: 346.2670876 V |
Voltage for Gain 150: |
T = +20 °C: 389.3611198 V T = -25 °C: 353.6210817 V |
Voltage for Gain 200: |
T = +20 °C: 393.718638 V T = -25 °C: 357.7331707 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.459583816 V-1 T = -25 °C: 4.873759931 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.789045704 V-1 T = -25 °C: 9.136263077 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.53267725 V-1 T = -25 °C: 16.50003983 V-1 |
Break-through voltage: |
T = +20 °C: 407.9975223 V T = -25 °C: 371.8734511 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history