Show Hamamatsu Avalanche Photo Diode 2510028271
This is all the information about APD 2510028271. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2510028271 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B11 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
382.8 V |
Dark current: |
5.2 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
172 |
Position in Box: |
5 |
EP1 batch: |
26 |
EP1 batch after irradiation: |
10116 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.85759 V T = -25 °C: 346.9964227 V |
Voltage for Gain 150: |
T = +20 °C: 390.7380753 V T = -25 °C: 354.5193197 V |
Voltage for Gain 200: |
T = +20 °C: 395.1247408 V T = -25 °C: 358.7692354 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.408566164 V-1 T = -25 °C: 4.953601739 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.498932998 V-1 T = -25 °C: 9.102405056 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.27065567 V-1 T = -25 °C: 14.4620122 V-1 |
Break-through voltage: |
T = +20 °C: 410.8993771 V T = -25 °C: 374.9689196 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history