Show Hamamatsu Avalanche Photo Diode 2510028259
This is all the information about APD 2510028259. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2510028259 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F09 |
Break-through voltage: |
406 V |
Voltage for Gain 100 (T=+25°C): |
377.3 V |
Dark current: |
6.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
171 |
Position in Box: |
27 |
EP1 batch: |
26 |
EP1 batch after irradiation: |
10116 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 377.8948922 V T = -25 °C: 342.3806177 V |
Voltage for Gain 150: |
T = +20 °C: 385.5626313 V T = -25 °C: 349.6884335 V |
Voltage for Gain 200: |
T = +20 °C: 389.8381267 V T = -25 °C: 353.793433 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.465308777 V-1 T = -25 °C: 4.886251491 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.958263295 V-1 T = -25 °C: 9.255081489 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.23480713 V-1 T = -25 °C: 14.85086081 V-1 |
Break-through voltage: |
T = +20 °C: 405.2600436 V T = -25 °C: 369.1434959 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history