Show Hamamatsu Avalanche Photo Diode 2509028176
This is all the information about APD 2509028176. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2509028176 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D14 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
386.7 V |
Dark current: |
7.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
170 |
Position in Box: |
27 |
EP1 batch: |
24 |
EP1 batch after irradiation: |
10114 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 386.5769076 V T = -25 °C: 351.2244641 V |
Voltage for Gain 150: |
T = +20 °C: 394.4405384 V T = -25 °C: 358.622455 V |
Voltage for Gain 200: |
T = +20 °C: 398.8143009 V T = -25 °C: 362.7628115 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.497661778 V-1 T = -25 °C: 4.92077503 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.957047707 V-1 T = -25 °C: 9.240071275 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.95288218 V-1 T = -25 °C: 14.765599 V-1 |
Break-through voltage: |
T = +20 °C: 414.433685 V T = -25 °C: 378.0830845 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history