Show Hamamatsu Avalanche Photo Diode 2509028171
This is all the information about APD 2509028171. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2509028171 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D01 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
383.5 V |
Dark current: |
6.2 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
170 |
Position in Box: |
22 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10667 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.3732605 V T = -25 °C: 349.3217302 V |
Voltage for Gain 150: |
T = +20 °C: 391.3377002 V T = -25 °C: 356.9169091 V |
Voltage for Gain 200: |
T = +20 °C: 395.7873994 V T = -25 °C: 361.2049596 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.455646818 V-1 T = -25 °C: 5.107177551 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.596659097 V-1 T = -25 °C: 10.01311615 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.61768533 V-1 T = -25 °C: 15.48042903 V-1 |
Break-through voltage: |
T = +20 °C: 411.9723708 V T = -25 °C: 375.3407903 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history