Show Hamamatsu Avalanche Photo Diode 2509028170
This is all the information about APD 2509028170. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2509028170 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A10 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
389.3 V |
Dark current: |
5.8 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
170 |
Position in Box: |
21 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10667 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 389.539567 V T = -25 °C: 353.7866706 V |
Voltage for Gain 150: |
T = +20 °C: 397.5125337 V T = -25 °C: 361.3631425 V |
Voltage for Gain 200: |
T = +20 °C: 401.9254766 V T = -25 °C: 365.5608808 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.404011824 V-1 T = -25 °C: 4.765649144 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.442390049 V-1 T = -25 °C: 9.095380378 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.55671845 V-1 T = -25 °C: 15.97024595 V-1 |
Break-through voltage: |
T = +20 °C: 416.9037968 V T = -25 °C: 380.5294531 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history