Show Hamamatsu Avalanche Photo Diode 2508028161
This is all the information about APD 2508028161. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2508028161 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F10 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
380.8 V |
Dark current: |
5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
170 |
Position in Box: |
16 |
EP1 batch: |
23 |
EP1 batch after irradiation: |
10113 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 380.4439127 V T = -25 °C: 345.1799567 V |
Voltage for Gain 150: |
T = +20 °C: 388.2399577 V T = -25 °C: 352.5133387 V |
Voltage for Gain 200: |
T = +20 °C: 392.5772477 V T = -25 °C: 356.6272099 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.539260922 V-1 T = -25 °C: 4.934191176 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.950987451 V-1 T = -25 °C: 9.163294255 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.01836936 V-1 T = -25 °C: 14.64970058 V-1 |
Break-through voltage: |
T = +20 °C: 408.1980457 V T = -25 °C: 371.8670546 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history