Show Hamamatsu Avalanche Photo Diode 2507028048
This is all the information about APD 2507028048. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2507028048 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
E15 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
386.6 V |
Dark current: |
8.2 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
168 |
Position in Box: |
44 |
EP1 batch: |
21 |
EP1 batch after irradiation: |
10111 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jul 2019 |
Sent for analysis after irradiation: |
19. Jul 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
16. Jul 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
17. Jul 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 386.754607 V T = -25 °C: 350.7365462 V |
Voltage for Gain 150: |
T = +20 °C: 394.5986723 V T = -25 °C: 358.1845505 V |
Voltage for Gain 200: |
T = +20 °C: 398.9301164 V T = -25 °C: 362.3558394 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.684642099 V-1 T = -25 °C: 4.951780824 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.558874041 V-1 T = -25 °C: 9.309034783 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.93344364 V-1 T = -25 °C: 14.76618715 V-1 |
Break-through voltage: |
T = +20 °C: 413.0080394 V T = -25 °C: 376.4909124 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history