Show Hamamatsu Avalanche Photo Diode 2506027982
This is all the information about APD 2506027982. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2506027982 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D13 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
388.4 V |
Dark current: |
5.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
177 |
Position in Box: |
37 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10667 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.6569392 V T = -25 °C: 352.7327365 V |
Voltage for Gain 150: |
T = +20 °C: 396.5695351 V T = -25 °C: 360.2233818 V |
Voltage for Gain 200: |
T = +20 °C: 400.9397511 V T = -25 °C: 364.4705459 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.353485115 V-1 T = -25 °C: 4.403249917 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.500699664 V-1 T = -25 °C: 8.431157254 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.61000368 V-1 T = -25 °C: 14.11045191 V-1 |
Break-through voltage: |
T = +20 °C: 417.1326903 V T = -25 °C: 380.091488 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history