Show Hamamatsu Avalanche Photo Diode 2505027897
This is all the information about APD 2505027897. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2505027897 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E02 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
382 V |
Dark current: |
4.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
176 |
Position in Box: |
6 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10667 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 381.8040108 V T = -25 °C: 346.786897 V |
Voltage for Gain 150: |
T = +20 °C: 389.7524471 V T = -25 °C: 354.004504 V |
Voltage for Gain 200: |
T = +20 °C: 394.1911469 V T = -25 °C: 358.2755958 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.605445346 V-1 T = -25 °C: 6.045067545 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.014329958 V-1 T = -25 °C: 10.2279742 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06601374 V-1 T = -25 °C: 11.88257884 V-1 |
Break-through voltage: |
T = +20 °C: 410.7568959 V T = -25 °C: 373.4984824 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history