Show Hamamatsu Avalanche Photo Diode 2504027856
This is all the information about APD 2504027856. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2504027856 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G12 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
381.5 V |
Dark current: |
5.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
175 |
Position in Box: |
18 |
EP1 batch: |
16 |
EP1 batch after irradiation: |
10099 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
19. Feb 2019 |
Sent for analysis after irradiation: |
01. Apr 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
27. Mar 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Mar 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 380.7063728 V T = -25 °C: 346.2859997 V |
Voltage for Gain 150: |
T = +20 °C: 388.5970083 V T = -25 °C: 353.5221169 V |
Voltage for Gain 200: |
T = +20 °C: 392.9911297 V T = -25 °C: 357.5751161 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.390319618 V-1 T = -25 °C: 4.97599379 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.614319581 V-1 T = -25 °C: 9.621643706 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.28520429 V-1 T = -25 °C: 15.42655524 V-1 |
Break-through voltage: |
T = +20 °C: 404.8297959 V T = -25 °C: 372.4423358 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history