Show Hamamatsu Avalanche Photo Diode 2503027806
This is all the information about APD 2503027806. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2503027806 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
G08 |
Break-through voltage: |
406 V |
Voltage for Gain 100 (T=+25°C): |
378.2 V |
Dark current: |
3.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
174 |
Position in Box: |
24 |
EP1 batch: |
14 |
EP1 batch after irradiation: |
10098 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
19. Mar 2019 |
Sent for analysis after irradiation: |
01. Apr 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
27. Mar 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Mar 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 377.6363494 V T = -25 °C: 342.865494 V |
Voltage for Gain 150: |
T = +20 °C: 385.4541485 V T = -25 °C: 350.2625403 V |
Voltage for Gain 200: |
T = +20 °C: 389.8145413 V T = -25 °C: 354.4390285 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.506710159 V-1 T = -25 °C: 4.640388 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.75825286 V-1 T = -25 °C: 9.370112099 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.53039406 V-1 T = -25 °C: 14.83023008 V-1 |
Break-through voltage: |
T = +20 °C: 405.8637338 V T = -25 °C: 368.6166694 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history