Show Hamamatsu Avalanche Photo Diode 2503027783
This is all the information about APD 2503027783. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2503027783 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
386.7 V |
Dark current: |
5.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
174 |
Position in Box: |
8 |
EP1 batch: |
14 |
EP1 batch after irradiation: |
10097 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
19. Feb 2019 |
Sent for analysis after irradiation: |
01. Apr 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
27. Mar 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Mar 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 387.0523808 V T = -25 °C: 352.2280939 V |
Voltage for Gain 150: |
T = +20 °C: 394.9402244 V T = -25 °C: 359.555526 V |
Voltage for Gain 200: |
T = +20 °C: 399.3022671 V T = -25 °C: 363.6410033 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.710245651 V-1 T = -25 °C: 5.012158866 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.280538036 V-1 T = -25 °C: 9.395071198 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87751388 V-1 T = -25 °C: 15.11466915 V-1 |
Break-through voltage: |
T = +20 °C: 413.9677424 V T = -25 °C: 377.5847219 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history