Show Hamamatsu Avalanche Photo Diode 2503027767
This is all the information about APD 2503027767. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2503027767 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2701029997/2503027767 |
| Unit: |
#1336 (barcode 1309015030) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.8 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
60 |
| Position in Box: |
47 |
| EP1 batch: |
13 |
| EP1 batch after irradiation: |
10096 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.16539 V T = -25 °C: 343.4104744 V |
| Voltage for Gain 150: |
T = +20 °C: 386.0027679 V T = -25 °C: 350.7065489 V |
| Voltage for Gain 200: |
T = +20 °C: 390.3649513 V T = -25 °C: 354.8068584 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.616853336 V-1 T = -25 °C: 4.907530875 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.213101251 V-1 T = -25 °C: 9.169497797 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.38666526 V-1 T = -25 °C: 16.54384619 V-1 |
| Break-through voltage: |
T = +20 °C: 405.6768214 V T = -25 °C: 369.736857 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
